Semiconductor supercapacitor system, method for making same and articles produced therefrom
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United States of America Patent
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Jan 30, 2001
Grant Date -
N/A
app pub date -
Aug 15, 1997
filing date -
Aug 12, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The invention relates to a nanostructured BaTiO.sub.3 film, plate or array that has from 1,000 to 10,000 times the storage capacity of conventional capacitors. The barium titanates are of the formula Ba.sub.a Ti.sub.b O.sub.c wherein a and b are independently between 0.75 and 1.25 and c is 2.5 to about 5.0. The barium titanates may further be doped with a material, 'M', selected from Au, is Au, Cu, Ni.sub.3 Al, Ru or InSn. The resulting titanate may be represented by the formula M.sub.d Ba.sub.a Ti.sub.b O.sub.c wherein d is about 0.01 to 0.25, a is about 0.75 to about 1.25, b is about 0.75 to about 1.25 and c is about 2.5 to about 5.0. X-ray diffraction results illustrate that the crystal structure of the thin films changed from predominantly cubic to tetragonal phase and crystallite size increased with increasing concentration of 'M'.
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