Method for forming a high-permittivity dielectric film use in a semiconductor device
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United States of America Patent
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Jan 30, 2001
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N/A
app pub date -
Oct 12, 1999
filing date -
Oct 9, 1998
priority date (Note) -
Expired
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Abstract
A method for forming a tantalum oxynitride film which is used as a high-permittivity dielectric film of a semiconductor device. In the method of the present invention, a tantalum-containing film is first formed on a semiconductor substrate, and then the tantalum-containing film is converted into a tantalum oxynitride film using a heat treatment or a plasma treatment in a reactive gas. According to the method of the present invention, the tantalum oxynitride film can be easily formed using process conditions established in prior art processes.
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