Photovoltaic device
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United States of America Patent
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Jan 30, 2001
Grant Date -
N/A
app pub date -
Aug 27, 1997
filing date -
Aug 28, 1996
priority date (Note) -
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Abstract
In a photovoltaic device having a plurality of pin structures, the pin structures comprise a first pin structure, a second pin structure and a third pin structure in the order from the light-incident side, each having an i-type semiconductor layer, and the i-type semiconductor layer of the first pin structure comprises amorphous silicon, the i-type semiconductor layer of the second pin structure comprises microcrystalline silicon and the i-type semiconductor layer of the third pin structure comprises amorphous silicon germanium or microcrystalline silicon germanium. The photovoltaic device according to the present invention provides a superior photoelectric conversion efficiency and less causing photo-deterioration.
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