Selectively doped electrostatic discharge layer for an integrated circuit sensor
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United States of America Patent
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Jan 30, 2001
Grant Date -
N/A
app pub date -
Aug 31, 1998
filing date -
Feb 17, 1998
priority date (Note) -
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Abstract
A structure and method for creating an integrated circuit passivation structure comprising, a circuit, a dielectric, and metal plates over which an insulating layer is disposed that electrically isolates the circuit, and a discharge layer that is deposited to form the passivation structure that protects the circuit from electrostatic discharges caused by, e.g., a finger, is disclosed. The discharge layer additionally contains dopants selectively deposited to increase electrostatic discharge carrying capacity while maintaining overall sensing resolution.
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