Semiconductor having low concentration of phosphorous
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 30, 2001
Grant Date -
N/A
app pub date -
Apr 21, 1995
filing date -
Dec 23, 1982
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A non-single-crystalline semiconductor material and a device utilizing the material, the material being of an intrinsic or substantially intrinsic conductivity type and including silicon and containing a dangling bond neutralizer consisting of hydrogen and/or a halogven wherein the concentration of carbon contained in the semiconductor material is less than 4.times.10.sup.18 and the concentration of boron contained in the semiconductor material is not higher than 2.times.10.sup.17 atoms/cm.sup.3.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully