Schlieren method for imaging semiconductor device properties
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United States of America Patent
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Jan 30, 2001
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N/A
app pub date -
Apr 14, 1999
filing date -
Apr 14, 1998
priority date (Note) -
Expired
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Abstract
An optical beam (3) passes through an illuminator (18), a semiconductor device (70), and an imager (20) to form a test object image (17) on a camera (16). Intensity variations in the object image (17) correspond to carrier density and temperature gradients inside the semiconductor device (70).
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