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Abstract

A semiconductor memory device having a latch signal generating circuit which can latch the read data at a data-read timing corresponding to either of the minimum tCAS and the minimum tCP, that is, in either of the low-potential state and the high-potential state of CASB. The semiconductor memory device has different data-read operation cycles, and comprises a decoder into which an address signal is input; a memory cell array consisting of memory cells; a D-latch circuit for latching data output from one of the memory cells which is selected by the decoder; an output buffer for outputting the data which is output from the D-latch circuit; and a latch signal generating circuit for generating a clock signal used in the D-latch circuit, the generated signal having a data-latch timing which is effective in each data-read operation cycle.

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