Thin film capacitor including perovskite-type oxide layers having columnar structure and granular structure
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United States of America Patent
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Feb 6, 2001
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N/A
app pub date -
Dec 10, 1998
filing date -
Dec 10, 1997
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Abstract
The present invention relates to a thin film capacitor that may be used as a stacked capacitor in a memory cell. In a thin film capacitor including a high dielectric constant layer sandwiched by two electrode layers, the high dielectric constant layer includes at least one perovskite-type oxide layer having a columnar structure and at least one perovskite-type oxide layer having a granular structure.
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