Process for fabricating semiconductor device
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United States of America Patent
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Feb 6, 2001
Issued Date -
N/A
app pub date -
Aug 11, 1998
filing date -
Jun 2, 1994
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Abstract
A process for fabricating a semiconductor device comprising the steps of: introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.
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