Method of forming nitrogen implanted ultrathin gate oxide for dual gate CMOS devices
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United States of America Patent
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Feb 6, 2001
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Apr 30, 1998
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Apr 30, 1998
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Abstract
A method of forming a nitrogen-implanted gate oxide in a semiconductor device includes preparing a silicon substrate; forming an oxide layer on the prepared substrate; and implanting N.sup.+ or N.sub.2.sup.+ ions into the oxide layer in a plasma immersion ion implantation apparatus.
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