Nonvolatile semiconductor memory device and method for fabricating the same, and semiconductor integrated circuit device
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United States of America Patent
Stats
-
Feb 6, 2001
Grant Date -
N/A
app pub date -
Jun 4, 1999
filing date -
Jan 16, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a semiconductor substrate having a surface including a first surface region at a first level, a second surface region at a second level lower than the first level, and a step side region linking the first surface region and the second surface region together, a channel region has a triple structure. Thus, a high electric field is formed in a corner portion between the step side region and the second surface region and in the vicinity thereof. A high electric field is also formed in the first surface region. As a result, the efficiency, with which electrons are injected into a floating gate, is considerably increased.
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- Non-US Classification not provided for expired patents
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