Arrays of semi-metallic bismuth nanowires and fabrication techniques therefor
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United States of America Patent
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Feb 13, 2001
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app pub date -
Oct 1, 1998
filing date -
Oct 2, 1997
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Abstract
Novel arrays of nanowires made of semi-metallic Bismuth (Bi) is disclosed made by unique electrodeposition techniques. Because of the unusual electronic properties of the semi-metallic Bi and the nanowire geometry, strong finite size effects in transport properties are achieved. In addition, very large positive magnetoresistance, 300% at low temperatures and 70% at room temperature, with quasilinear field dependence have been attained.
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