Small electrode for a chalcogenide switching device and method for fabricating same
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United States of America Patent
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Feb 20, 2001
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N/A
app pub date -
Jun 25, 1999
filing date -
May 9, 1997
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Abstract
A memory cell and a method of fabricating the memory cell having a small active area. By forming a spacer in a window that is sized at the photolithographic limit, a pore may be formed in dielectric layer which is smaller than the photolithographic limit. Electrode material is deposited into the pore, and a layer of structure changing material, such as chalcogenide, is deposited onto the lower electrode, thus creating a memory element having an extremely small and reproducible active area.
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