Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
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United States of America Patent
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Feb 20, 2001
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N/A
app pub date -
Feb 19, 1998
filing date -
Feb 20, 1997
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Abstract
A method and an apparatus for depositing a dielectric layer to fill in a gap between adjacent metal lines. In preferred embodiments of the method, a first dielectric layer is deposited over the lines and subsequently etched using both chemical and physical etchback steps. After the etchback steps are completed, a second dielectric layer is deposited over the first dielectric layer to fill in the gap.
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