Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
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United States of America Patent
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-
Feb 20, 2001
Grant Date -
N/A
app pub date -
May 14, 1997
filing date -
May 14, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A deposition system in a semiconductor fabrication system provides a slotted grounded darkspace shield, which protects the target sidewalls. It has been found that an axial slot in the grounded darkspace shield can prevent eddy currents from flowing in the darkspace shield and thereby prevent RF power losses due to eddy currents that would otherwise flow in an unslotted darkspace shield due to RF power applied to an RF coil-shield. By preventing the RF power losses, the RF coupling efficiency of RF power applied to the RF coil-shield can also be improved.
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