Method of manufacturing tandem type thin film photoelectric conversion device
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United States of America Patent
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Feb 20, 2001
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N/A
app pub date -
Sep 3, 1999
filing date -
Feb 26, 1999
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Abstract
A p type semiconductor layer, an i type amorphous photoelectric conversion layer and an n type semiconductor layer of an amorphous type photoelectric conversion unit are formed in separate deposition chambers, respectively. A p type semiconductor layer, an i type crystalline photoelectric conversion layer and an n type semiconductor layer of crystalline type photoelectric conversion unit are formed continuously in one deposition chamber. Accordingly, a method of manufacturing a tandem type thin film photoelectric conversion device is obtained by which a tandem type thin film photoelectric conversion device having superior performance and high quality can be formed by a simple apparatus at a low cost with superior productivity.
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