US Patent No: 6,191,011

Number of patents in Portfolio can not be more than 2000

Selective hemispherical grain silicon deposition

Stats

ATTORNEY / AGENT: (SPONSORED)
 

Importance

Loading Importance Indicators... loading....

Abstract

Systems and methods are described for semiconductor wafer pretreatment. A method of increasing the selectivity of silicon deposition with regard to an underlying oxide layer during deposition of a silicon containing material by broadening a selective temperature of formation window for said silicon containing material by decreasing a lower temperature endpoint includes: providing a semiconductor wafer with the underlying oxide layer in a processing chamber; then pumping water from then processing chamber; and then depositing the silicon containing material on the semiconductor wafer. A step of seeding the semiconductor wafer can be conducted by exposing the semiconducotor wafer to a germanium containing gas. A chlorine containing precursor and/or hydrogen can be introduced into the processing chamber to increase the selectivity of the silicon containing material to the underlying oxide. The selective HSG temperature of formation window is widened. In addition, robustness with regard to changes in the reactor ambient and substrate condition, and selectivity with regard to underlying dielectric layers, are both improved.

Loading the Abstract Image... loading....

First Claim

Related Publications

Loading Related Publications... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
AG ASSOCIATESSAN JOSE, CA8

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bransky, Itai Haifa, IL 4 53
Brosilow, Benjamin Afula, IL 4 50
Gilboa, Yitzhak Eric Cupertino, CA 2 45
Levy, Sagy Sunnyvale, CA 31 162
Spielberg, Hedvi Sunnyvale, CA 2 45

Cited Art

Patent Info (Count) # Cites Year
 
ROUND ROCK RESEARCH, LLC (3)
5,407,534 Method to prepare hemi-spherical grain (HSG) silicon using a fluorine based gas mixture and high vacuum anneal 120 1993
5,629,223 Method to prepare hemi-spherical grain (HSG) silicon using a fluorine based gas mixture and high vacuum anneal 40 1994
5,656,531 Method to form hemi-spherical grain (HSG) silicon from amorphous silicon 76 1995
 
MICRON TECHNOLOGY, INC. (2)
5,770,500 Process for improving roughness of conductive layer 71 1996
5,963,833 Method for cleaning semiconductor wafers and 52 1997
 
STEAG RTP SYSTEMS, INC. (2)
5,002,630 Method for high temperature thermal processing with reduced convective heat loss 41 1989
5,324,684 Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure 73 1992
 
AG ASSOCIATES (1)
5,634,974 Method for forming hemispherical grained silicon 67 1995
 
CANON KABUSHIKI KAISHA (1)
5,854,097 Method of manufacturing a semiconductor device 14 1995
 
LSI LOGIC CORPORATION (1)
5,521,108 Process for making a conductive germanium/silicon member with a roughened surface thereon suitable for use in an integrated circuit structure 24 1993
 
NEC CORPORATION (1)
5,385,863 Method of manufacturing polysilicon film including recrystallization of an amorphous film 104 1992
 
PRIMAXX ACQUISITION CORP. (1)
5,228,206 Cluster tool dry cleaning system 74 1992
 
SAES GETTER S.P.A. (1)
5,972,183 Getter pump module and system 9 1995
 
SAMSUNG ELECTRONICS CO., LTD. (1)
5,981,351 Method of forming capacitor of a semiconductor device and a semiconductor capacitor formed thereby 4 1998
 
SONY ELECTRONICS INC. (1)
5,520,002 High speed pump for a processing vacuum chamber 13 1995

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
FREESCALE SEMICONDUCTOR, INC. (26)
6,501,973 Apparatus and method for measuring selected physical condition of an animate subject 21 2000
6,590,236 Semiconductor structure for use with high-frequency signals 6 2000
6,555,946 Acoustic wave device and process for forming the same 14 2000
6,638,838 Semiconductor structure including a partially annealed layer and method of forming the same 28 2000
6,673,646 Growth of compound semiconductor structures on patterned oxide films and process for fabricating same 28 2001
6,709,989 Method for fabricating a semiconductor structure including a metal oxide interface with silicon 78 2001
6,531,740 Integrated impedance matching and stability network 112 2001
6,646,293 Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates 34 2001
7,019,332 Fabrication of a wavelength locker within a semiconductor structure 3 2001
6,693,298 Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same 3 2001
6,855,992 Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same 5 2001
6,667,196 Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method 5 2001
6,589,856 Method and apparatus for controlling anti-phase domains in semiconductor structures and devices 6 2001
6,673,667 Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials 3 2001
6,693,033 Method of removing an amorphous oxide from a monocrystalline surface 0 2001
6,916,717 Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate 6 2002
7,045,815 Semiconductor structure exhibiting reduced leakage current and method of fabricating same 2 2002
7,169,619 Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process 2 2002
6,885,065 Ferromagnetic semiconductor structure and method for forming the same 4 2002
7,020,374 Optical waveguide structure and method for fabricating the same 12 2003
6,965,128 Structure and method for fabricating semiconductor microresonator devices 10 2003
7,067,856 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same 5 2004
7,005,717 Semiconductor device and method 7 2004
7,342,276 Method and apparatus utilizing monocrystalline insulator 3 2004
7,105,866 Heterojunction tunneling diodes and process for fabricating same 4 2004
7,211,852 Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate 5 2005
 
MOTOROLA MOBILITY LLC (5)
6,498,358 Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating 155 2001
6,594,414 Structure and method of fabrication for an optical switch 7 2001
6,585,424 Structure and method for fabricating an electro-rheological lens 3 2001
6,639,249 Structure and method for fabrication for a solid-state lighting device 13 2001
7,161,227 Structure and method for fabricating semiconductor structures and devices for detecting an object 1 2004
 
SANDISK 3D LLC (2)
6,713,371 Large grain size polysilicon films formed by nuclei-induced solid phase crystallization 8 2003
7,361,578 Method to form large grain size polysilicon films by nuclei-induced solid phase crystallization 1 2006
 
INTELLECTUAL VENTURES II LLC (1)
6,559,471 Quantum well infrared photodetector and method for fabricating same 8 2000
 
MATTSON TECHNOLOGY, INC. (1)
6,638,876 Method of forming dielectric films 25 2001
 
MOTOROLA SOLUTIONS, INC. (1)
6,992,321 Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials 2 2001
 
NOVELLUS SYSTEMS, INC. (1)
7,993,457 Deposition sub-chamber with variable flow 1 2007