Method for etching
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United States of America Patent
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-
Feb 27, 2001
Grant Date -
N/A
app pub date -
Nov 4, 1998
filing date -
Feb 10, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Masked tin oxide films are etched with an etchant composed of hydrochloric acid and a penetration control agent. The exposed metal oxide film is reduced to metallic tin by the action of active hydrogen (H.sup.0) produced in the reaction of zinc with acid, and etching stops when the metallic tin becomes impenetrable to H.sup.0.
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