Deep sub-micron metal etch with in-situ hard mask etch
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United States of America Patent
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Feb 27, 2001
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app pub date -
Dec 16, 1998
filing date -
Dec 16, 1998
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Abstract
The invention includes a process for the production of semiconductor devices comprising the steps of depositing a metal layer on a semiconductor substrate, depositing a hardmask layer on said metal layer, depositing a photoresist on said hardmask layer, patterning said photoresist, thereby exposing and patterning portions of said hardmask layer, etching said exposed portions of said hardmask layer with a hardmask etchant, thereby exposing and patterning portions of said metal layer, removing, or not, said photoresist, and etching said exposed portions of said metal layer with a metal etchant and semiconductor devices made by said process.
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