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Abstract

A method for forming a dielectric layer upon a silicon layer. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a silicon layer. There is then formed through use of a first plasma annealing method employing a nitrogen containing plasma annealing atmosphere a silicon nitride containing layer upon a partially consumed silicon layer derived from the silicon layer. There is then oxidized through use of a second thermal annealing method employing an oxidizing material containing atmosphere the silicon nitride containing layer to form an oxidized silicon nitride containing layer upon a further consumed silicon layer derived from the partially consumed silicon layer. The method is particularly useful for forming gate dielectric layers within field effect transistors (FETs).

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First Claim