Method of manufacturing silicon based thin film photoelectric conversion device
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United States of America Patent
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Mar 13, 2001
Grant Date -
N/A
app pub date -
Sep 3, 1999
filing date -
Feb 26, 1999
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Abstract
A p type semiconductor layer, an i type crystalline (polycrystalline, microcrystalline) photoelectric conversion layer, and an n type semiconductor layer are successively formed in the same plasma CVD deposition chamber. The p type semiconductor layer is produced on condition that the pressure in the deposition chamber is at least 5 Torr. Accordingly, a silicon-based thin film photoelectric conversion device having the p type semiconductor layer, the i type crystalline photoelectric conversion layer, and the n type semiconductor layer stacked on each other is manufactured. A method of manufacturing a silicon-based thin film photoelectric conversion device is thus implemented to produce a photoelectric conversion device having a superior performance and quality by a simple apparatus at a low cost and with high productivity.
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