Removal of dielectric oxides
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United States of America Patent
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Mar 13, 2001
Grant Date -
N/A
app pub date -
Aug 13, 1998
filing date -
Aug 13, 1998
priority date (Note) -
Expired
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Abstract
Oxides such as those commonly used in interlevel dielectrics may be removed employing a liquid composition containing a fluoride-containing compound and an organic solvent. Preferred compositions are substantially nonaqueous and include an anhydride. Improved methods for selective removal of oxides, especially for removal of silicon oxides where pre-exposed (or conductive metal - containing) features are present, where metal (conductive metal - contaimg) features are to be exposed by the desired oxide removal, or where the silcon oxide otherwise contacts metal (or conductive metal - containing) features are provided.
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