Method of forming a local interconnect with improved etch selectivity of silicon dioxide/silicide
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 13, 2001
Grant Date -
N/A
app pub date -
Oct 14, 1999
filing date -
Oct 14, 1999
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method and arrangement for forming a local interconnect without weakening the field edge or disconnecting the diffusion region at the field edge introduces additional nitrogen by ion implantation into a nitrogen-containing etch stop layer (e.g., SiON) that has already been deposited, by plasma enhanced chemical vapor deposition (PECVD), for example. The enriched nitrogen etch stop layer is harder to etch than conventional PECVD SiON so that when etching the dielectric layer in which the local interconnect material is subsequently deposited, the etching stops at the etch stop layer in a controlled manner. This prevents the unintentional etching of the silicide region and diffusion region at the field edge.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully