Laser approaches for diamond synthesis
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United States of America Patent
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Mar 20, 2001
Grant Date -
N/A
app pub date -
Jul 20, 1999
filing date -
Jul 20, 1998
priority date (Note) -
Expired
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Abstract
A method for producing well-crystallized adherent diamond layers on WC--Co substrates. An array of focused laser beams is scanned across the WC--Co sample. Useful lasers include the excimer, YAG:Nd, and carbon dioxide types. The process is conducted in open air with carbon dioxide and nitrogen gases delivered for shrouding the substrate. A luminous plasma is found a few mm above the WC--Co insert. The duration of the deposition process in a typical case is approximately 40 s. This typically gives 20-40 .mu.m thick coatings. The vertical growth rate is about 1 .mu.m/s.
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