Substituted phenylethylene precursor deposition method
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United States of America Patent
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Mar 20, 2001
Grant Date -
N/A
app pub date -
Jul 12, 1999
filing date -
Nov 10, 1998
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Abstract
A method for using a Cu(hfac) precursor with a substituted phenylethylene ligand to form an adhesive seed layer on an IC surface has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C.sub.1 to C.sub.6 alkyl, C.sub.1 to C.sub.6 haloalkyl, phenyl, H and C.sub.1 to C.sub.6 alkoxyl. One variation, the .alpha.-methylstyrene ligand precursor has proved to be especially adhesive. Copper deposited with this precursor has low resistivity and high adhesive characteristics. The seed layer provides a foundation for subsequent Cu layers deposited through either CVD, PVD, or electroplating. The adhesive seed layer permits the subsequent Cu layer to be deposited through an economical high deposition rate process.
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