Finishing method for semiconductor wafers using a lubricating boundary layer
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United States of America Patent
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Mar 20, 2001
Grant Date -
N/A
app pub date -
Nov 5, 1999
filing date -
Nov 5, 1999
priority date (Note) -
Withdrawn
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Abstract
A method of using lubricating boundary layers for finishing semiconductor wafers is described. The lubricating boundary layer thickness is controlled to improve finishing and reduce unwanted surface defects. Differential lubricating boundary layer methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer methods of finishing.
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