Chemical vapor deposition system and method
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United States of America Patent
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Mar 27, 2001
Grant Date -
N/A
app pub date -
Jan 6, 2000
filing date -
Apr 23, 1999
priority date (Note) -
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status (Latency Note)
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Abstract
A chemical vapor deposition (CVD) system is provided for processing a substrate 110. The system 100 includes a heated muffle 115, a chamber 120 having an injector assembly 130 for introducing chemical vapor to process the substrate 110, and a belt 105 for moving the substrate through the muffle and chamber. The belt 105 has an oxidation-resistant coating 175 to reduce formation of deposits thereon. The coating 175 is particularly useful for resisting formation of chromium oxides on belts made from a chromium-containing alloy. In one embodiment, the oxidation-resistant coating 175 comprises a securely-adhered oxide layer 185 that is substantially free of transition metals. Preferably, the oxidation-resistant coating 175 comprises aluminum oxide. More preferably, the coating 175 comprises an aluminum oxide layer 185 securely adhered over a nickel aluminide layer 180.
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