Memory cell with a stacked capacitor

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United States of America Patent

PATENT NO 6207524
SERIAL NO

09162867

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor memory cell includes a field effect transistor coupled to a storage capacitor that formed as a multilayer stack over the surface of the silicon chip of the cell. The capacitor is formed by three conformal layers over the surface of a cup-shaped contact hole in a silicon oxide layer overlying the surface of the chip.

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Patent Owner(s)

  • POLARIS INNOVATIONS LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gutsche, Martin Neufahrn, DE 65 1012

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