Oxide/nitride stacked gate dielectric and associated methods
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United States of America Patent
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Mar 27, 2001
Issued Date -
N/A
app pub date -
Jun 17, 1999
filing date -
Oct 28, 1998
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Expired
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Abstract
A method for making an oxide/nitride stacked layer makes the nitride layer defective so that it is semi-transparent or permeable to oxygen. The method includes first forming an oxide layer on a semiconductor substrate. The defective nitride layer is formed on the oxide layer using direct plasma enhanced chemical vapor deposition. The defective nitride layer is formed while exposing the plasma with a low energy magnetic field for providing a uniform energy distribution across a surface of the oxide layer. A resulting distribution of thicknesses of the defective nitride layer has a standard deviation less than about 1.5% across a wafer. The defective nitride layer is permeable to oxygen so that when the semiconductor substrate is annealed, the interface trap sites are significantly reduced or eliminated.
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