Forming submicron integrated-circuit wiring from gold, silver, copper and other metals

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United States of America Patent

PATENT NO 6208016
SERIAL NO

09256124

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Abstract

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A typical integrated circuit interconnects millions of microscopic transistors and resistors with aluminum wires buried in silicon-dioxide insulation. Yet, aluminum wires and silicon-dioxide insulation are a less attractive combination than gold, silver, or copper wires combined with polymer-based insulation, which promise both lower electrical resistance and capacitance and thus faster, more efficient circuits. Unfortunately, conventional etch-based techniques are ineffective with gold, silver, or copper, and conventional polymer formation promote reactions with metals that undermine the insulative properties of polymer-based insulations. Accordingly, the inventor devised methods which use a liftoff procedure to avoid etching problems and a non-acid-polymeric precursor and non-oxidizing cure procedure to preserve the insulative properties of the polymeric insulator. The resulting interconnective structures facilitate integrated circuits with better speed and efficiency.

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Patent Owner(s)

Patent OwnerAddress
ROUND ROCK RESEARCH LLC26 DEER CREEK LANE MT KISCO NY 10549

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Farrar, Paul A So. Burlington, VT 236 4342

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