Apparatus having titanium silicide and titanium formed by chemical vapor deposition
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United States of America Patent
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Mar 27, 2001
Grant Date -
N/A
app pub date -
Aug 19, 1999
filing date -
Aug 21, 1997
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Abstract
Apparatus having titanium silicide and titanium formed by chemical vapor deposition (CVD) in a contact. The chemical vapor deposition includes forming titanium silicide and/or titanium by combining a titanium precursor in the presence of hydrogen, H.sub.2. The chemical vapor deposition may further include forming titanium silicide and/or titanium by combining titanium tetrachloride, TiCl.sub.4, in the presence of hydrogen. The chemical vapor deposition may further include forming titanium silicide and/or by combining tetradimethyl amino titanium, Ti(N(CH.sub.3).sub.2).sub.4, in the presence of hydrogen. For production of titanium silicide, reaction of the titanium precursor may occur with a silicon precursor or a silicon source occurring as part of the contact. Use of a silicon precursor reduces depletion of a silicon base layer in the contact.
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