Method for analyzing probe yield sensitivities to IC design

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United States of America Patent

PATENT NO 6210983
SERIAL NO

09333787

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Abstract

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A method for predicting yield limits of semiconductor wafers in a factory, including the steps of generating a wafer probe test pareto, determining a histogram of the distribution from a selected group from the wafer probe test pareto, extracting parametric data from a database from the histogram, screening the parametric data for values of the parametric data outside of a predetermined range, determining if an average value of the screened parametric data shows a sensitivity to variations in the parametric data, determining specification limits of the screened parametric data, and using the specification limits to form an operating window to show the sensitivity.

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Patent Owner(s)

Patent OwnerAddress
TEXAS INSTRUMENTS INCORPORATED12500 TI BOULEVARD MS 3999 DALLAS TX 75243

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Atchison, Nick Santa Cruz, CA 3 231
Ross, Ron Scotts Valley, CA 11 481

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