Method of manufacturing a compound semiconductor thin film on a substrate
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United States of America Patent
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Apr 3, 2001
Grant Date -
N/A
app pub date -
Mar 3, 1999
filing date -
Sep 5, 1997
priority date (Note) -
Expired
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Abstract
The present invention relates to a method of manufacturing a compound semiconductor thin film by the thermal decomposition of a metal organic compound and a solar cell using the above thin film. An organic solvent solution of the metal organic compound containing at least one metal-sulfur bond is pulverized into fine particles by an ultrasonic vibration method or by a spray injection method and the obtained fine particles or gaseous metal organic compound are thermally decomposed by contacting them on the heated surface of a thin film forming substrate and thus a compound semiconductor metal sulfide thin film is formed on the thin film forming substrate. With this method, a compound semiconductor thin film of large surface area with uniform quality can be manufactured at low manufacturing cost with good reproducibility. These metal sulfide thin films are of high purity, high density and high quality and thus can be used for various photo-electronic devices.
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