Semi-insulated indium phosphide based compositions
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 3, 2001
Issued Date -
N/A
app pub date -
Feb 22, 1994
filing date -
Oct 21, 1983
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
It has been found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1.times.10.sup.9 ohm-cm have been achieved as compared to resistivities on the order of 5.times.10.sup.3 ohm-cm for other types of semi-insulating epitaxial indium phosphide.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully