Mask pattern data producing apparatus, mask pattern data producing method and semiconductor integrated circuit device
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United States of America Patent
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Apr 3, 2001
Grant Date -
N/A
app pub date -
May 28, 1998
filing date -
Oct 20, 1997
priority date (Note) -
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Abstract
A well wall of a second type of conduction is formed so as to surround a first IC formed in a first IC forming region specified by a region specifying means and to extend from a surface of a semiconductor substrate to a bottom well on the basis of information about the first IC forming region and information about the bottom well in a mask pattern produced by a bottom well mask pattern producing means.
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