Reference voltage generating circuit with MOS transistors having a floating gate
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United States of America Patent
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Apr 10, 2001
Grant Date -
N/A
app pub date -
Jan 25, 1999
filing date -
Jan 28, 1998
priority date (Note) -
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Abstract
A reference voltage generating circuit with MOS transistors having a floating gate is disclosed. The reference voltage generating circuit has first and second MOS transistors in which substantially the same current flows by means of a current mirror circuit. The differential voltage between the threshold voltages of the first and second MOS transistors is applied from the source of the first transistor as the reference voltage. The first and second transistors are of a construction that includes a floating gate, and the threshold voltage can be set to any value by means of the amount of charge injected to the floating gate.
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