Temperature compensated bias network for a power amplifier and method of operation

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United States of America Patent

PATENT NO 6215358
SERIAL NO

09397224

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Abstract

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There is disclosed, for use in an RF amplifier, a biasing circuit for maintaining the quiescent current of an output power transistor at a selected bias level. The biasing circuit comprises a temperature sensor circuit for generating a temperature-sensitive control voltage that varies according to changes in temperature of the output power transistor and a bias voltage generating circuit capable of detecting a variation in the temperature-sensitive control voltage. In response to a detected change in the temperature-sensitive control voltage, the bias circuit adjusts a bias voltage applied to the output power transistor by an amount suitable to offset a change in the selected bias current level caused by a temperature change related to the variation in the temperature-sensitive voltage.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Appel, Mark J Richardson, TX 3 119
Bednekoff, George A Plano, TX 3 70
Hon, Terry Wylie, TX 5 35

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