Method of maintaining constant erasing speeds for non-volatile memory cells
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United States of America Patent
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Apr 10, 2001
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N/A
app pub date -
Feb 16, 2000
filing date -
Feb 16, 2000
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Abstract
A method of erasing a memory cell that has a first region and a second region with a channel therebetween and a gate above the channel, and a charge trapping region that contains an initial amount of charge. The method includes applying a first cycle of voltages across the gate and the first region so that the first amount of charge is removed from the charge trapping region. A second amount of charge is written into the charge trapping region and subsequently a second cycle of one or more voltages is applied across the gate and the first region so that the second amount of charge is removed from the charge trapping region, wherein the initial applied voltage of the second cycle of voltages is equal to the final applied voltage of the first cycle of voltages.
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