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Abstract

Disclosed herein is a method of forming a gate in a semiconductor device capable of preventing a deterioration in the property of a gate electrode formed of a refractory metal in a heat treatment process. This method comprises steps of: depositing sequentially a gate insulation film, a PVD TiN film, a doped silicone layer, a diffusion barrier film, a refractory metal film for a gate electrode and a first CVD insulation film, on a semiconductor substrate; etching the first CVD insulation film, the refractory metal film, the diffusion barrier film, and the doped silicone layer using a gate electrode mask to form the gate electrode while exposing the TiN film; implanting lightly-doped impurity ions into the semiconductor substrate using the gate electrode as a mask; forming spacers formed of a second CVD insulating film on side walls of the gate electrode; wet-etching the TiN film in such a manner that only a portion of the TiN film disposed beneath the gate electrode between the spacers remains; and implanting heavily-doped impurity ions into the semiconductor substrate using the gate electrode and the spacers as a mask to form an impurity junction region of an LDD structure.

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First Claim