Photodiode with buffer layer
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United States of America Patent
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Apr 17, 2001
Grant Date -
N/A
app pub date -
Dec 7, 1998
filing date -
Dec 9, 1997
priority date (Note) -
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Abstract
A half-transmittance photodiode usable as a photodetector in receivers for 'ping-pong transmission' is improved in temperature characteristic, so that a half-transmittance photodiode usable at low temperatures is available. A p-n junction is formed in a buffer layer, not in an absorption layer.
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