Manufacturing method of spin-valve magnetoresistive thin film element
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United States of America Patent
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Apr 24, 2001
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N/A
app pub date -
Jul 20, 1999
filing date -
Jul 21, 1998
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Abstract
A spin-valve magnetoresistive element includes a plurality of layers. The magnetic moment of a first pinned magnetic layer is smaller than the magnetic moment of a second pinned magnetic layer. In this case, a magnetic field of 100 to 1,000 Oe is applied in a direction opposite to the direction for which obtaining of magnetization for the first pinned magnetic layer is desired, or a magnetic field of 5 kOe or greater is applied in the same direction as the direction for which obtaining of magnetization for the first pinned magnetic layer is desired. Thus, a first magnetization of the first pinned magnetic layer and the magnetic moment of a second pinned magnetic layer can be maintained in an antiparallel state.
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