Insulated gate field effect transistor and its manufacturing method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 24, 2001
Grant Date -
N/A
app pub date -
Oct 16, 1997
filing date -
May 18, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An insulated gate field effect transistor is constructed by first forming a non-single crystalline semiconductor layer or island on an insulating surface of a substrate. A gate insulating layer is then formed on the semiconductor layer. A gate electrode is formed on the gate insulating layer. An impurity is added to a portion of the semiconductor layer to form source and drain regions, and the semiconductor layer is irradiated with light through the gate insulating layer. In preferred embodiments, the substrate is maintained at a temperature less than 400.degree. C. and the light have a wavelength of 250-600 nm.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully