Method and apparatus for sequentially etching a wafer using anisotropic and isotropic etching
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United States of America Patent
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Apr 24, 2001
Grant Date -
N/A
app pub date -
Nov 29, 1999
filing date -
Nov 29, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An apparatus and method for in-situ etching of a substrate comprising both a polysilicon layer and an overlying dielectric layer. An embodiment of the method comprises an anisotropic etch of the dielectric layer in a chamber using a first fluorinated gas (such as CF.sub.4, NF.sub.3, SF.sub.6, and the like) as an etch gas to expose at least a portion of underlying polysilicon layer. Following the anisotropic etch and without removing the substrate from the chamber, i.e., in situ, an isotropic etch is preformed on the underlying polysilicon layer using a second fluorinated gas (such as CF.sub.4, NF.sub.3, SF.sub.6, and the like) as an etch gas.
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