Physical vapor processing of a surface with non-uniformity compensation
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United States of America Patent
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May 1, 2001
Grant Date -
N/A
app pub date -
Jul 20, 1998
filing date -
Feb 23, 1995
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Abstract
An apparatus and method for compensating the process-related asymmetries produced in physical vapor processing of a surface. The apparatus and method may be used on either a substrate when sputtering material from a source or when using an ionized physical vapor deposition (IPVD) apparatus to either deposit a film onto or remove material from a substrate. A compensating magnet is configured and positioned to produce a compensating magnetic field. The compensating magnetic is positioned to offset the effects of chamber and process-related asymmetries, particularly those that affect the distribution of plasma processing on a substrate where the plasma has been otherwise symmetrically produced. Assymetries about an axis of the substrate, for example, are corrected, in, for example, systems such as sputter coating machines where a rotating magnet cathode or other such technique produces an initially symmetrical plasma. Asymmetrical non-uniformities in deposited films are reduced to an acceptable amount and substrates may be cleaned in situ prior to metallization.
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- 15 United States
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Patent Owner(s)
- TOKYO ELECTRON LIMITED
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Hurwitt, Steven D | late of Park Ridge, NJ | 19 | 1214 |
Licata, Thomas J | Monroe, NY | 15 | 479 |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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