Methods to fabricate thin film transistors and circuits

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United States of America Patent

PATENT NO 6225149
SERIAL NO

09303743

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Abstract

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A method for fabricating a thin film field effect transistor is described in this invention. The active layer of the thin film transistor (TFT) is formed by a low cost chemical bath deposition method. The fabrication procedure includes deposition of a metal layer on an insulating substrate, patterning of the metal layer to form a metal gate, formation of the di-electric layer, deposition of the active layer and formation of source and drain contacts.

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Patent Owner(s)

Patent OwnerAddress
MCGILL UNIVERSITY OFFICE OF TECHNOLOGY TRANSFER3350 UNIVERSITY STREET MONTREAL QUEBEC H3A 2A7

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gan, Feng Yuan 2100 St. Marc, Apt. 1203, Montreal, Quebec, CA 6 109
Shih, Ishiang 3300 Bahama Street, Brossard, Quebec, CA 36 4308

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