Power conducting substrates with high-yield integrated substrate capacitor
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United States of America Patent
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May 1, 2001
Grant Date -
N/A
app pub date -
Jan 8, 1999
filing date -
Apr 27, 1998
priority date (Note) -
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Abstract
Several inventive features for increasing the yield of substrate capacitors are disclosed. The inventive features relating to selective placement of insulating layers and patches around selected areas of the capacitor's main dielectric layer. These insulating layers and defects prevent certain manufacturing processing steps from creating pin-hole defects in the main dielectric layer. The inventive features are suitable for any type of material for the main dielectric layer, and are particularly suited to anodized dielectric layers.
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