Method of patterning photoresist using precision and non-precision techniques
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United States of America Patent
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May 8, 2001
Grant Date -
N/A
app pub date -
Aug 18, 1999
filing date -
Mar 10, 1998
priority date (Note) -
Expired
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Abstract
A method for patterning a layer of photoresist includes the steps of 1) exposing the photoresist through a standard precision mask to define all possible patterns and features, and 2) selecting desired patterns and features with a non-precision targeting energy beam or mask. Consequently, no custom precision masks are required to pattern the various layers of photoresist during the fabrication of application specific integrated circuits (ASICs), thereby reducing both the lead-time and costs for manufacturing ASICs.
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