Use of PE-SiON or PE-OXIDE for contact or via photo and for defect reduction with oxide and W chemical-mechanical polish

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United States of America Patent

PATENT NO 6228760
SERIAL NO

09263563

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Abstract

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A method forming a protective (SiON or PE-Ox) dielectric anti-reflective coating (DARC) over a di electric layer after a chemical-mechanical polish dielectric layer planarization process and before a chemical-mechanical polish of a conductive layer used in a contact or via plug formation. A dielectric layer is chemical-mechanical polished thereby creating microscratches in the dielectric layer. The invention's protective SiON or PE-OX DARC layer is formed over the dielectric layer whereby the protective SiON or PE-OX DARC layer fills in the microscratches. A first opening is etched in he protective layer and the dielectric layer. A conductive layer is formed over the protective layer and fills the first opening. The conductive layer is chemical-mechanical polished to remove the conductive layer from over the protective layer and to form an interconnect filling the first opening. The protective SiON or PE-OX DARC layer is used as a CMP stop thereby preventing microscratches in the dielectric layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jang, Syun-Ming Hsin-Chu, TW 381 6833
Shih, Tsu Hsin-Chu, TW 64 982
Twu, Jih-Churng Hsin-Chu, TW 52 471
Yen, Anthony Hsin-Chu, TW 157 3414
Yu, Chen-Hua Hsin-Chu, TW 2207 47923

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