Semiconductor memory device capable of accurate control of internally produced power supply potential
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United States of America Patent
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May 8, 2001
Grant Date -
N/A
app pub date -
May 22, 2000
filing date -
Aug 31, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A Vpp level detecting circuit detects a potential on a Vpp trunk line which is provided commonly to a plurality of memory array banks for supplying a boosted potential thereto, and a boosted potential pump circuit supplies a current to the Vpp trunk line in accordance with a result of the detection. Since the position on the Vpp trunk line where the Vpp level detecting circuit performs the monitoring is substantially equally spaced from the respective memory blocks, an influence caused by an active state of the memory array bank can be suppressed during control of the potential on the Vpp trunk line.
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