Method for forming a semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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May 15, 2001
Grant Date -
N/A
app pub date -
Jan 3, 2000
filing date -
Jan 3, 2000
priority date (Note) -
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Abstract
A substrate (155) is placed into a plating bath (19, 59), a current in the bath is measured, and a film (110) is plated onto the substrate (155). In one embodiment the current is measured using a sensing array (57) positioned within the bath, and the measurement is used to control a plating deposition parameter. In an alternative embodiment the current is measured using the sensing array (57) and a characteristic of the plated film is controlled using a corresponding control array (53) also positioned within the plating bath (59).
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